SI6433DQ |
RFQ for SI6433DQ Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| SI6433DQ | - | - | - |
This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Typical Application |
Features |
| • Power management• Load switch | • 4.5 A, 20 V. RDS(ON) = 47 m @ VGS = 4.5 V RDS(ON) = 65 m @ VGS = 2.5 V RDS(ON) = 100 m @ VGS = 1.8 V• RDS(ON) rated for use with 1.8 V logic• Low gate charge (13nC typical)• High performance trench technology for extremely low RDS(ON)• Low profile TSSOP-8 package |
| Symbol | Parameter | Ratings | Units | |
| VDSS | Drain-Source Voltage | -20 | V | |
| VGSS | Gate-Source Voltage | ±8 | V | |
| ID | Drain Current Continuous | (Note 1a) | -5.4 | A |
|
Pulsed |
-40 | |||
| PD | Power Dissipation | (Note 1a) | 1.3 | W |
| (Note 1b) | 0.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to +150 | °C | |
